附註:Includes bibliographical references and index.
pt. I. Semiconductors. ch. 1. The main properties of semiconductors. 1.1. Intrinsic semiconductors. 1.2. Impurity semiconductors. 1.3. Deep levels. 1.4. Summary -- ch. 2. Motion of electrons and holes inside the crystal. 2.1. Thermal motion. 2.2. Motion in the electric field. 2.3. Diffusion. 2.4. Summary -- pt. II. Barriers & junctions. ch. 3. The barrier on the crystal boundary. 3.1. Work function. 3.2. Surface states. 3.3. Bending bands, surface potential. 3.4. Summary -- ch. 4. The main parameters of potential barriers. 4.1. How the electric field penetrates into a metal, dielectric and semiconductor. 4.2. Field dependence on the coordinate. 4.3. Poisson's equation. 4.4. A few words about accumulation layers. 4.5. Summary -- ch. 5. p-n Junction. 5.1. Ways of obtaining p-n junctions. 5.2. Barrier on the boundary. 5.3. Summary -- ch. 6. Diodes with the p-n junctions. 6.1. Photodiodes. 6.2. Variable capacitors. 6.3. Light-emitted diodes. 6.4. Solar cells. 6.5. Rectifier diodes. 6.6 Summary -- pt. III. Transistors. ch. 7. Bipolar transistors. 7.1. Principle of operation of a bipolar transistor. 7.2. Some words about the types and manufacturing of bipolar transistors. 7.3. The simplest transistor circuits. 7.4. Summary -- ch. 8. Field effect transistors. 8.1. The beginning. 8.2. Maturity and flourishing. 8.3. Epitaxy. 8.4. A few important details. 8.5. The work of the FETs in actual regimes. 8.6. FET as an element of electronic circuits. 8.7. Summary -- ch. 9. Transistors and life. 9.1. The first king. 9.2. Ugly duckling. 9.3. Long live the new king! 9.4. The king ... disappears. Long live the new king! 9.5 Claimants to the throne.
