附註:Includes bibliographical references and index.
Cover -- Table of Contents -- Acknowledgments -- About the author -- Introduction -- 1 Ferroelectric RAMs -- 1. 1 Background of Ferroelectric Memory Technologies -- 1.2 Basic Ferroelectric Technology -- 1.3 Ferroelectric RAMs with 2T2C Cells -- 1.4 Early Ferroelectric Memory Architectures -- 1.5 2T2C FeRAM Architectures -- 1.6 Comparison of 2T2C FeRAM to Other Memories -- 1.7 Ferroelectric RAMs with 1T1C Cells -- 1.8 Evolution of 1T1C FeRAM Architectures -- 1.9 Reference Cells for the 1T1C FeRAM -- 1.10 Cell Plate Configurations for the 1T1C FeRAM -- 1.11 Novel Ferroelectric Cells -- 1.12 Ferroelectric Materials -- 1.13 Reliability Considerations in Ferroelectrics -- 1.14 Modeling and Simulation of Ferroelectric Capacitors -- 1.15 Applications and Trends for Ferroelectric RAMs -- 1.16 The MFS FET Cell -- Bibliography -- 2 Magnetic RAMs -- 2.1 Overview of Magnetic Memories -- 2.2 Anisotropic Magnetic RAM -- 2.3 The Giant-Magneto-Resistive (GMR) Effect -- 2.4 Spin Valve Cell and Operation -- 2.5 Pseudo-Spin Valve MRAM Cell and Operation -- 2.6 Issues for Pseudo Spin Valve MRAMs -- 2.7 Pseudo Spin Valve Architecture -- 2.8 Spin Valve Models -- 2.9 Spin-Valve Type MRAM Market and Application -- 2.10 Other Spin-Valve MRAM Cells and Technologies -- 2.11 Magnetic Tunnel Junction Technology -- 2.12 Magnetic Tunneling Junction Memory Cells -- 2.13 MTJ Cells With Series Transistors -- 2.14 Technical and Reliability Issues for the MTJ MRAM -- 2.15 Applications and Trends for Magnetic RAMs -- 2.16 Hall Effect MRAM Cells -- Bibliography -- 3 Non-Volatiles After Floating Gate -- 3.1 The Problem with Floating Gate Non-volatile Memories -- 3.2 Multi-bit Memory Storage: -- 3.3 Proton Memory -- 3.4 MONOS/SONOS Technology -- 3.5 Single Electron Memories -- 3.6 Multiple Island Memories -- 3.7 Silicon Nanocrystals/Nanodots -- 3.8 Alternative Nanocrystal Devices -- 3.9 Manufacturing Techniques for Nanocrystals -- 3.10 Applications for Silicon Nanocrystal Memories -- Bibliography -- 4
摘要:Emerging Memories: Technologies and Trends attempts to provide background and a description of the basic technology, function and properties of emerging as well as discussing potentially suitable applications. This book explores a range of new memory products and technologies. The concept for some of these memories has been around for years. A few completely new. Some involve materials that have been in volume production in other type of devices for some time. Ferro-electrics, for example, have been used in capacitors for more than 30 years. In addition to looking at using known devices and materials in novel ways, there are new technologies being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the new polymer memories which hold the potential for the significant manufacturing reduction. Emerging Memories: Technologies and Trends is a useful reference for the professional engineer in the semiconductor industry.
