Silicon-germanium heterojunction bipolar transistors
- 作者: Cressler, John D.
- 其他作者: Niu, Guofu.
- 出版: Boston, MA : Artech House ©2003.
- 稽核項: 1 online resource (xviii, 570 pages) :illustrations.
- 標題: TECHNOLOGY & ENGINEERING , TECHNOLOGY & ENGINEERING Electronics -- Transistors. , Bipolar transistors. , germanium. , Germanium , Transistors bipolaires. , Electronic books. , Germanium. , ElectronicsTransistors.
- ISBN: 1580535992 , 9781580535991
- 試查全文@TNUA:
- 附註: Includes bibliographical references and index.
- 摘要: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
- 電子資源: https://dbs.tnua.edu.tw/login?url=https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=87713
- 系統號: 005303467
- 資料類型: 電子書
- 讀者標籤: 需登入
- 引用網址: 複製連結
This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
來源: Google Book
來源: Google Book
評分