Applications of silicon-germanium heterostructure devices
- 作者: Maiti, C. K.
- 其他作者: Armstrong, G. A.
- 出版: Bristol : Institute of Physics Pub. ©2001.
- 稽核項: 1 online resource (xv, 401 pages) :illustrations.
- 叢書名: Series in optics and optoelectronics
- 標題: Cristaux de germanium. , TECHNOLOGY & ENGINEERING Electronics -- Solid State. , ElectronicsSemiconductors. , Silicium cristallisé. , TECHNOLOGY & ENGINEERING , Germanium crystals. , Hétérostructures. , Silicon crystals. , Optoelectronic devices. , Heterostructures. , Dispositifs optoélectroniques. , TECHNOLOGY & ENGINEERING Electronics -- Semiconductors. , ElectronicsSolid State. , Electronic books.
- ISBN: 0750307234 , 9780750307239
- ISBN: 0750307234
- 試查全文@TNUA:
- 附註: Includes bibliographical references and index. Introduction; Film Growth and Material Parameters; Principles of SiGe-HBTs; Design of SiGe-HBTs; Simulation of SiGe-HBTs; Strained-Si Heterostructure FETs; SiGe Heterostructure Schottky Diodes; SiGe Optoelectronic Devices; RF Applications of SiGe-HBTs
- 摘要: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.
- 電子資源: https://dbs.tnua.edu.tw/login?url=https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=101871
- 系統號: 005305767
- 資料類型: 電子書
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- 引用網址: 複製連結
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of strained layers, background theory of the HBT, how device simulation can be used to predict the optimum HBT device structure for a particular application such as cryogenics, compact SiGe-HBT models for RF applications and the SPICE parameter extraction, and strategies for the enhancement of the high-frequency performance of heterojunction field effect transistors (HFETs) using MOSFET or MODFET structures. The book also covers the design and application of optoelectronic devices and assesses how SiGe technology competes with other alternative technologies in the RF wireless communications marketplace.
來源: Google Book
來源: Google Book
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