附註:Includes bibliographical references (pages 171-181) and index.
Cover -- Table of Contents -- List of Figures -- List of Tables -- Preface -- Acknowledgments -- Part I Analysis and Simulation of Passive Devices -- 1. INTRODUCTION -- 1. Introduction -- 2. Passive Devices in Early Integrated Circuits -- 3. Applications of Passive Devices -- 4. Wirless Communications -- 5. Si Integrated Circuit Technology -- 6. Contribution of this Research -- 2. PROBLEM DESCRIPTION -- 1. Definition of Passive Devices -- 2. Loss Mechanisms -- 3. Device Layout -- 4. Substrate Coupling -- 3. PREVIOUS WORK -- 1. Early Work -- 2. Passive Devices on the GaAs substrate -- 3. Passive Devices on the Si substrate -- 4. Passive Devices on Highly Conductive Si Substrate -- 4. ELECTROMAGNETIC FORMULATION -- 1. Introduction -- 2. Maxwell's Equations -- 3. Calculating Substrate Induced Losses -- 4. Inversion of Maxwell's Differential Equations -- 5. Numerical Solutions of Electromagnetic Fields -- 6. Discretization of Maxwell's Equations -- 5. INDUCTANCE CALCULATIONS -- 1. Introduction -- 2. Definition of Inductance -- 3. Parallel and Series Inductors -- 4. Filamental Inductance Formulae for Common Configurations -- 5. Calculation of Self and Mutual Inductance for Conductors -- 6. High Frequency Inductance Calculation -- 6. CALCULATION OF EDDY CURRENT LOSSES -- 1. Introduction -- 2. Electromagnetic Formulation -- 3. Eddy Current Losses at Low Frequency -- 4. Eddy Currents at High Frequency -- 5. Examples -- 7. ASITIC -- 1. Introduction -- 2. ASITIC Organization -- 3. Numerical Calculations -- 4. Circuit Analysis -- 8. EXPERIMENTAL STUDY -- 1. Measurement Results -- 2. Device Calibration -- 3. Single Layer Inductor -- 4. Multi-Layer Inductor -- Part II Applications of Passive Devices -- 9. VOLTAGE CONTROLLED OSCILLATORS -- 1. Introduction -- 2. Motivation -- 3. Passive Device Design and Optimization -- 4. VCO Circuit Design -- 5. VCO Implementation -- 6. Measurements -- 7. Conclusion -- 10. DISTRIBUTED AMPLIFIERS -- 1. Introduction -- 2. Image Parameter Method
摘要:Wireless RF and microwave ICs depend critically on passive devices, such as inductors, capacitors, and transformers. Passive devices allow the optimization of key RF circuit building blocks by minimizing noise, maximizing gain and frequency of operation, and minimizing power. The integration of passive devices on the Si IC substrate requires a critical understanding of substrate coupling and loss, including electrically induced conductive and displacement current flowing in the substrate as well as magnetically induced eddy currents. Design, Simulation and Applications of Inductors and Transformers for Si RF ICs provides a deep understanding of the physics involved in the operation of these devices at microwave frequencies. Additionally, the book tackles two critical blocks that depend critically on the passive devices, the voltage-controlled oscillator and a distributed amplifier. Design, Simulation and Applications of Inductors and Transformers for Si RF ICs will be of interest to RF and microwave integrated circuit engineers, computer aided designers, device physicists, and electromagnetic researchers, as well as power electronics engineers.
